According to a press release, the Swiss Centre Suisse d’Electronique et de Microtechnique SA (CSEM) and Japanese Mie Fujitsu Semiconductor Ltd (MIFS) have agreed on a cooperation in the development of Deeply Depleted Channel (“DDC”) and near/sub-threshold technologies for the Internet of Things (IoT)/Wearables market.
The main focus of the cooperation is the development of ultra-low voltage, ultra-low power standard cell libraries, power management cells and memories as well as the development of a representative qualification vehicle to showcase the technology, and will include cross-licensing of related IP. For the IoT technologies and wearables, it is very important that batteries are as small as possible while not loosing any battery life time or efficiency.
The new Extreme-Low Power platform, the Japanese-European collaboration should result in, is scheduled to be ready for limited release by the end of 2016.
Switzerland has a long tradition of using MOSFETs in the sub-threshold region; the watch-industry realised in the early days that this region was ideal for low-power systems and had clear benefits over using bipolar transistors. The well-known EKV MOSFET model describing MOS field effect transistors in several domains of operation goes back to Switzerland, as well, to EPFL Proffs. Enz, Krummenacher & Vittoz.
(Picture: CSEM, MIFS)